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Hitachi Energy - Power semiconductors: RoadPak SiC module for e-mobility

RoadPak

SiC MOSFET

5SFG 1150B121001

RoadPak SiC phase leg module 1200 V, 1150 A*

  • VDSS = 1200 V
  • ID = 2 x 1150 A*
  • Molded package optimized for e-Mobility application
  • Pin-fin structure for lowest thermal resistance
  • Lowest losses thanks to Silicon Carbide chip set
  • Main terminals with holes for screw connection or without holes for welding

 

The RoadPak is our latest innovative solution for all electromobility applications.
Thanks to the latest generation of SiC MOSFET chipsets and improved liquid cooling through the pin-fin baseplate, it enables the design of converters with the lowest total leakage inductance.
In addition, the RoadPak enables very simple low-inductance connections so that the current output of the inverters can be increased with just one type of module.
This allows RoadPak to be used in a clearly defined inverter portfolio based on different power classes.
RoadPak applications include:

  • Main drivetrain for xEVs
  • E-trucks, e-buses
  • Auxiliary traction converter and power electronics for xEV charging

Hitachi Energy - Power semiconductors: LoPak modules

Building on our experience with high-performance, high-reliability devices for voltages of 3,300 V and above, we have expanded our portfolio by introducing a family of 1,200 V power modules. Starting with a 1,200 V 2 x 900 A module using an improved LoPak module housing, the new products complement the existing 1,700 V family. These new modules feature next-generation chips of the extremely low-loss, robust trench IGBT technology and correspondingly optimized diodes. In addition to the standard use of a copper (Cu) baseplate, press-fit pins for the control connections and factory-applied Thermal Interface Material (TIM) on the baseplate, the improved LoPak package includes:

  • A new Cu lay-out on the DBC substrate to optimize the chip positions, to minimize temperature interactions and to minimize leakage inductances and capacitances as well as the ohmic resistance of the conductors while optimizing the current distribution between the IGBT and diode pairs.
  • Use of copper bonding wire for the DBC/DBC and DBC/power connections as well as an increased number of bonding wires.

 

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PowerSEM

Bridge rectifiers, diode and thyristor modules, AC converters, IGBT and MOSFET modules for higher outputs

Starpower is a manufacturer of power semiconductors

Starpower Europe AG, based in Cadenazzo, Switzerland, was founded in May 2014 as the European subsidiary of the Chinese manufacturer of power modules StarPower Semiconductor Ltd.

StarPower is a successful, dynamically growing company in the field of power electronics.