HITACHI ABB - Applikationsschriften und Technische Informationen - Hauber & Graf electronics GmbH

Applikationsschriften und Technische Informationen

Applikationsschriften
4500V-3600A reverse conducting IGCT An 8.5kV Sacrificial Bypass Thyristor with Unprecedented Rupture Resilience Applying fast recovery diodes Applying IGBT and diode dies Applying IGBTs Bi-directionally controlled thyristors Cosmic ray failures of power semiconductor devices Design of RC snubbers for phase control applications Failure rates of fast recovery diodes due to cosmic rays Failure rates of IGCTs due to cosmic rays Field measurements on high power press-pack semiconductors Gate-drive recommendations for phase control and bi-directionally controlled thyristors High current rectifier diodes for welding applications High current Welding diodes High power density SiC power module for Formular E PCIM2021 High power rectifier diodes how to increase power-rating with the right cooling-strategy Humidity Robustness of IGBT Guard Ring Termination IGBT diode safe operating area Load-cycling capability of HiPak IGBT modules New SiC module boosting the efficiency of power applications New IGCT platform for offshore wind converters exeeding 15 MW Optimierung des internen Aufbaus und der Ansteuerung von Leistungshalbleitermodulen Paralleling of IGBT modules Reliability Evaluation of IGBT based on demanding Long-therm application Rugged LV Trench IGBT with Extreme Stability in Continuous SOA Operation-Next Generation LV Technology Sacrificial Bypass Thyristor for MMC applications SEMIS - ABB Semiconductors simulation tool Surge currents for IGBT diodes Surge currents for phase control thyristors Switching losses for phase control and bi-directionally controlled thyristors Thermal design and temperature ratings of IGBT modules Thermal runaway during blocking Thyristor with Low Circuit Commutated Turn-off Time for HVDC and FACTS Voltage definitions for phase control and bi-directionally controlled thyristors Voltage ratings of high power semiconductors

Technische Informationen

5SEE 0540T1830 Phase Control Thyristor Modul / Rectifier Dioden Modul 5SEG 0540T1820 Phase Control Thyristor Modul / Rectifier Dioden Modul 5SET 0540T1800 Phase Control Thyristor Modul 5SNG 0900R120590 LoPak phase leg IGBT Modul 5SZK 9118-01 General Environmental Conditions For High Power Semiconductors LoPak1 Use and Installation_TIM_5SYA2142-01_Final3 LoPak1 Use and Installation_TP_5SYA2113-01_Final3 Mounting Instructions for HiPak modules Mounting instructions for StakPaks Operation (industry) for presspack diodes, PCTs and GTOs Operation (Industry) of HiPak Environmental specification Operation (traction) for presspack diodes, PCTs and GTOs Operation of HiPak (traction) Operation of pressure contact IGCTs Storage of diodes, PCTs and GTOs Environmental specification Storage of HiPak Environmental specification Storage of IGCTs Transport of diodes, PCTs and GTOs Environmental specification Transport of HiPak Transport of IGCT