Building on our experience with high-performance, high-reliability devices for voltages of 3,300 V and above, we have expanded our portfolio by introducing a family of 1,200 V power modules. Starting with a 1,200 V 2 x 900 A module using an improved LoPak module housing, the new products complement the existing 1,700 V family. These new modules feature next-generation chips of the extremely low-loss, robust trench IGBT technology and correspondingly optimized diodes. In addition to the standard use of a copper (Cu) baseplate, press-fit pins for the control connections and factory-applied Thermal Interface Material (TIM) on the baseplate, the improved LoPak package includes:

• A new Cu lay-out on the DBC substrate to optimize the chip positions, to minimize temperature interactions and to minimize leakage inductances and capacitances as well as the ohmic resistance of the conductors while optimizing the current distribution between the IGBT and diode pairs.
• Use of copper bonding wire for the DBC/DBC and DBC/power connections as well as an increased number of bonding wires.

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